XRD, µ-Raman and optical absorption investigations of ZnO deposited by SILAR method

نویسندگان

  • C. Vargas-Hernández
  • F. N. Jiménez-García
  • J. F. Jurado
  • V. Henao Granada
چکیده

ZnO thin films were deposited by successive ionic layer adsorption and reaction (SILAR) method using a zinc nitrate and ammonium bath on glass substrates. The number of employed cycles were 50, 100 and 200. The films were studied by X-ray diffraction (XRD), optical absorption (UV–Vis) and m-Raman. Structural analysis by XRD shows that the as-deposited ZnO films have high-orientation along c-direction (0 0 2). The band gap energy decreases from 3.39 to 3.32 eV with number of cycles. By m-Raman spectroscopy, the principal vibration modes around 435, 550, 579, and 1100 cm 1 were determined. r 2008 Elsevier Ltd. All rights reserved. PACS: 63.50.+x; 71.35.Cc; 78.20. e

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عنوان ژورنال:
  • Microelectronics Journal

دوره 39  شماره 

صفحات  -

تاریخ انتشار 2008